Gallium Nitride: powering AI data centers with precision
As artificial intelligence drives data centers to new heights, the demand for efficient power delivery is skyrocketing. Gallium nitride (GaN) power devices, particularly GaN High Electron Mobility Transistors (HEMTs), are rising to the challenge, offering unmatched performance over traditional silicon architectures. Companies like Infineon and Navitas are at the forefront, leveraging GaN’s strengths to fuel AI’s growth. Here’s a look at why GaN HEMTs are revolutionizing data centers, their booming market per Yole Development and a few historical milestones.
Silicon MOSFETs have long powered electronics, but their performance is plateauing under AI’s energy demands. GaN HEMTs, built on a heterostructure of GaN and AlGaN, create a two-dimensional electron gas (2DEG) with electron mobility up to 2000 cm²/V·s—over ten times higher than silicon’s ~150 cm²/V·s. This high mobility enables GaN HEMTs to switch at frequencies exceeding 1 MHz with minimal losses, compared to silicon’s typical 100 kHz limit. Lower on-resistance (often <50 mΩ vs. silicon’s >200 mΩ) and reduced gate charge further cut energy waste, shrinking power supplies and cooling needs. As Navitas Semiconductor’s CEO Gene Sheridan recently noted, “Most data centers can’t handle next-gen AI GPUs like NVIDIA’s Blackwell without GaN’s efficiency.”
AI data centers rely on high-performance GPUs and servers that demand robust power systems. Infineon’s CoolGaN™ HEMTs excel in 48V DC-DC converters and server power factor correction, achieving efficiencies above 98%. Navitas’ GaNFast™ ICs, integrating GaN HEMTs, enable compact 8.5 kW power supplies for AI servers, reducing size while boosting reliability. With data centers consuming 3% of global electricity, GaN’s low-loss switching helps slash operational costs and environmental impact.
The GaN market is soaring, fueled by AI’s expansion. Yole Development reports power GaN revenues reached $1 billion in 2023, up 41%, and are projected to hit $2 billion by 2027, with a 46% annual growth rate through 2029. Data centers drive much of this demand. Infineon’s $830 million acquisition of GaN Systems and Navitas’ collaborations, like with Great Wall for AI power architectures, highlight GaN’s momentum. Yole’s Taha Ayari forecasts GaN dominating high-power applications, with further market gains ahead.
GaN’s journey began in the 1990s with blue LEDs, earning a 2014 Nobel Prize. Its power applications took off later. In 2010, Efficient Power Conversion (EPC) showcased GaN HEMTs in compact LiDAR systems, proving their potential. A defining moment came in 2015 with Google’s “Little Box Challenge,” where a GaN-based 2 kW inverter, the size of a laptop, delivered triple the power density of silicon systems, setting the stage for GaN’s data center dominance.
GaN HEMTs’ high mobility, fast switching, and efficiency make them perfect for AI’s power-hungry workloads. While silicon struggles with higher losses and bulkier designs, GaN thrives. Infineon’s 300 mm GaN wafer technology aims to lower costs, and Navitas’ integrated HEMT designs simplify adoption. As AI pushes boundaries, GaN will drive data centers toward greater performance and sustainability.
References
Middleton, C. (2023). Gallium nitride and silicon carbide to be essential for enabling scale and potential of AI. Semiconductor Today.
Navitas Semiconductor. (2021). Gallium Nitride semiconductors: The Next Generation of Power. Navitas.
Infineon Technologies. (2021). GaN transistors (GaN HEMTs) - CoolGaN™ Transistors. Infineon.
Grand View Research. (2023). Gallium Nitride Semiconductor Devices Market Report, 2030. Grand View Research.
CSIS. (2024). Gallium Nitride: A Strategic Opportunity for the Semiconductor Industry. CSIS.
MDPI. (2024). Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives. MDPI.
EPC. (2023). Where is GaN Going? Gallium Nitride Market, Applications & Future. EPC.
Altium Resources. (2024). Growth Prospects for GaN and SiC Semiconductors. Octopart.
Navitas Semiconductor. (2024). Navitas Showcases Breakthroughs in GaN and SiC Technologies for AI Data Centers. Navitas.
Power Electronics News. (2023). GaN and SiC: The Future of Power Electronics. Power Electronics News.
Semiengineering. (2019). Wide Band Gap—The Revolution In Power Semiconductors. Semiengineering.
Cadence. (2024). Gallium Nitride vs. Silicon. Advanced PCB Design Blog
Yole Group, “Power GaN: Harnessing New Horizons,” 2024.
Navitas Semiconductor, “World’s First 8.5 kW GaN PSU,” 2025.
Infineon Technologies, “300 mm GaN Wafer Technology,” 2024.
CSIS, “Gallium Nitride: A Strategic Opportunity,” 2024.
Semiconductor Today, “GaN Con - Power GaN,” 2019.
